Infineon OptiMOS N-Channel MOSFET, 77 A, 150 V Enhancement, 8-Pin PG-WSON-8 BSC110N15NS5SCATMA1
- N° de stock RS:
- 284-647
- Référence fabricant:
- BSC110N15NS5SCATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 4000 unités)*
6 960,00 €
(TVA exclue)
8 440,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 18 octobre 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 4000 + | 1,74 € | 6 960,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-647
- Référence fabricant:
- BSC110N15NS5SCATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 77A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PG-WSON-8 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 77A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PG-WSON-8 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon OptiMOS Power MOSFET stands as a Pinnacle of performance in the realm of MOSFET technology. Designed for demanding industrial applications, it offers superior efficiency and reliability, making it an Ideal choice for high frequency switching and synchronous rectification. With innovative dual side cooling and an operating temperature capability of up to 175°C, this device ensures robust operation even under significant thermal stress. The infusion of Advanced materials further enhances its thermal stability and reliability, ensuring that it meets the strictest industry standards. With its comprehensive validation to JEDEC standards, this MOSFET is tailored for engineers seeking excellence in power electronics.
Exceptional thermal resistance for reliability
N channel design for versatile switching
Streamlined package for space efficiency
Qualified for industrial applications' performance
Optimised for high frequency technology designs
Liens connexes
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