Infineon OptiMOS N-Channel MOSFET, 171 A, 100 V Enhancement, 8-Pin PG-WSON-8 BSC030N10NS5SCATMA1
- N° de stock RS:
- 284-639
- Référence fabricant:
- BSC030N10NS5SCATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 4000 unités)*
6 720,00 €
(TVA exclue)
8 120,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 18 octobre 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 4000 + | 1,68 € | 6 720,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-639
- Référence fabricant:
- BSC030N10NS5SCATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 171A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | OptiMOS | |
| Package Type | PG-WSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 188W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 171A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series OptiMOS | ||
Package Type PG-WSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 188W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon OptiMOS Power MOSFET is designed to deliver exceptional performance in demanding applications. As part of the OptiMOS 5 series, it combines ground breaking technology with robust features to meet the needs of industrial applications. With a substantial drain source breakdown voltage of 100V and significant avalanche capability, this component guarantees robust operation in high stress situations. The product’s innovative design streamlines heat dissipation, preserving performance even under heavy loads, which translates to increased longevity and reliability in your circuits.
Dual side cooling optimizes heat distribution
175°C rating for challenging environments
N channel configuration enhances flexibility
Superior thermal resistance maximizes efficiency
100% avalanche tested for reliability
Pb free plating complies with RoHS
Halogen free construction for eco friendliness
Qualified per JEDEC standards for industry
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