ROHM RD3G08CBLHRB Type N-Channel MOSFET, 80 A, 40 V Depletion, 3-Pin TO-252 RD3G08CBLHRBTL
- N° de stock RS:
- 264-956
- Référence fabricant:
- RD3G08CBLHRBTL
- Fabricant:
- ROHM
Offre groupée disponible
Sous-total (1 ruban de 5 unités)*
5,83 €
(TVA exclue)
7,055 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 2 485 unité(s) expédiée(s) à partir du 31 décembre 2025
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 5 - 45 | 1,166 € | 5,83 € |
| 50 - 95 | 1,106 € | 5,53 € |
| 100 - 495 | 1,024 € | 5,12 € |
| 500 - 995 | 0,944 € | 4,72 € |
| 1000 + | 0,91 € | 4,55 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 264-956
- Référence fabricant:
- RD3G08CBLHRBTL
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | RD3G08CBLHRB | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.2mΩ | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 96W | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Length | 10mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series RD3G08CBLHRB | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.2mΩ | ||
Channel Mode Depletion | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 96W | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Length 10mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM MOSFET that stands out for its impressive performance across various applications. Designed for high efficiency, this component excels in handling significant power levels with minimum heat generation, making it ideal for demanding automotive and industrial environments. Its compact DPAK package ensures easy integration into space-constrained layouts, while the RoHS-compliant, lead-free construction guarantees compliance with modern environmental standards.
Conforms to RoHS standards ensuring environmental safety
Compact DPAK package facilitates space efficient designs
Tested under rigorous conditions for guaranteed reliability
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