Microchip DN2625 Type N-Channel MOSFET, 250 V Depletion, 3-Pin TO-252 DN2625K4-G
- N° de stock RS:
- 598-727
- Référence fabricant:
- DN2625K4-G
- Fabricant:
- Microchip
Sous-total (1 bobine de 2000 unités)*
3 174,00 €
(TVA exclue)
3 840,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 09 avril 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2000 + | 1,587 € | 3 174,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 598-727
- Référence fabricant:
- DN2625K4-G
- Fabricant:
- Microchip
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-252 | |
| Series | DN2625 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Channel Mode | Depletion | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-252 | ||
Series DN2625 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Channel Mode Depletion | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Microchip Low threshold depletion-mode transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Very low gate threshold voltage
Designed to be source driven
Low switching losses
Low effective output capacitance
Designed for inductive loads
Liens connexes
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