ROHM RD3P06BBKH Type N-Channel MOSFET, 59 A, 100 V Depletion, 8-Pin TO-252 RD3P06BBKHRBTL
- N° de stock RS:
- 264-943
- Référence fabricant:
- RD3P06BBKHRBTL
- Fabricant:
- ROHM
Offre groupée disponible
Sous-total (1 ruban de 5 unités)*
4,82 €
(TVA exclue)
5,83 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 85 unité(s) expédiée(s) à partir du 19 février 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le ruban* |
|---|---|---|
| 5 - 45 | 0,964 € | 4,82 € |
| 50 - 95 | 0,916 € | 4,58 € |
| 100 - 495 | 0,848 € | 4,24 € |
| 500 - 995 | 0,78 € | 3,90 € |
| 1000 + | 0,752 € | 3,76 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 264-943
- Référence fabricant:
- RD3P06BBKHRBTL
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 59A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | RD3P06BBKH | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15.8mΩ | |
| Channel Mode | Depletion | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 76W | |
| Typical Gate Charge Qg @ Vgs | 17.3nC | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 59A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series RD3P06BBKH | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15.8mΩ | ||
Channel Mode Depletion | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 76W | ||
Typical Gate Charge Qg @ Vgs 17.3nC | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The ROHM MOSFET, engineered for robust applications requiring high efficiency and reliability. With a breaking voltage of up to 100V and a continuous drain current of 59A, this device is designed for demanding tasks in automotive and industrial environments. It features a compact DPAK/TO-252 package, allowing for easy integration into various circuit designs.
Suitable for various applications including automotive and industrial electronics
Pulsed drain current capability of up to 118A underscores versatility in demanding environments
Utilises Pd free plating ensuring compatibility with modern production processes
Liens connexes
- ROHM RD3G08CBLHRB N-Channel MOSFET 40 V Depletion, 3-Pin DPAK RD3G08CBLHRBTL
- STMicroelectronics STD N-Channel MOSFET 480 V Depletion, 3-Pin DPAK STD13N60M6
- Diodes Inc N-Channel MOSFET 100 V, 3-Pin DPAK DMTH10H015SK3-13
- Microchip DN2470 Silicon N-Channel MOSFET 700 V Depletion, 3-Pin DPAK DN2470K4-G
- Microchip DN2450 Silicon N-Channel MOSFET 500 V Depletion, 3-Pin DPAK DN2450K4-G
- Microchip DN3765 Silicon N-Channel MOSFET 650 V Depletion, 3-Pin DPAK DN3765K4-G
- onsemi NVD5C464N N-Channel MOSFET 40 V, 3-Pin DPAK NVD5C464NT4G
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRFR2905ZTRPBF