ROHM RD3P06BBKH Type N-Channel MOSFET, 59 A, 100 V Depletion, 8-Pin TO-252 RD3P06BBKHRBTL
- N° de stock RS:
- 264-943
- Référence fabricant:
- RD3P06BBKHRBTL
- Fabricant:
- ROHM
Offre groupée disponible
Sous-total (1 ruban de 5 unités)*
4,82 €
(TVA exclue)
5,83 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 35 unité(s) expédiée(s) à partir du 20 février 2026
- Plus 100 unité(s) expédiée(s) à partir du 11 juin 2026
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 5 - 45 | 0,964 € | 4,82 € |
| 50 - 95 | 0,916 € | 4,58 € |
| 100 - 495 | 0,848 € | 4,24 € |
| 500 - 995 | 0,78 € | 3,90 € |
| 1000 + | 0,752 € | 3,76 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 264-943
- Référence fabricant:
- RD3P06BBKHRBTL
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 59A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | RD3P06BBKH | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15.8mΩ | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 76W | |
| Typical Gate Charge Qg @ Vgs | 17.3nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 59A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series RD3P06BBKH | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15.8mΩ | ||
Channel Mode Depletion | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 76W | ||
Typical Gate Charge Qg @ Vgs 17.3nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The ROHM MOSFET, engineered for robust applications requiring high efficiency and reliability. With a breaking voltage of up to 100V and a continuous drain current of 59A, this device is designed for demanding tasks in automotive and industrial environments. It features a compact DPAK/TO-252 package, allowing for easy integration into various circuit designs.
Suitable for various applications including automotive and industrial electronics
Pulsed drain current capability of up to 118A underscores versatility in demanding environments
Utilises Pd free plating ensuring compatibility with modern production processes
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