Infineon AUIRFS Type N-Channel MOSFET, 59 A, 55 V, 3-Pin TO-252
- N° de stock RS:
- 244-2874
- Référence fabricant:
- AUIRFR2905ZTRL
- Fabricant:
- Infineon
Sous-total (1 bobine de 3000 unités)*
3 843,00 €
(TVA exclue)
4 650,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 03 avril 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 1,281 € | 3 843,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 244-2874
- Référence fabricant:
- AUIRFR2905ZTRL
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 59A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-252 | |
| Series | AUIRFS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 59A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-252 | ||
Series AUIRFS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon AUIRFR2905ZTRL specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .These features combine to make this design an extremely efficientand reliable device for use in Automotive applications and a widevariety of other applications.
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified
Liens connexes
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK AUIRFR2905ZTRL
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRFR2905ZTRPBF
- Infineon HEXFET N-Channel MOSFET 55 V DPAK IRLR3705ZTRPBF
- Infineon HEXFET N-Channel MOSFET 55 V DPAK IRFR2405TRLPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRFR1205TRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRLR2705TRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRLR024NTRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRFR4105ZTRPBF
