Nexperia PSM Type N-Channel MOSFET, 280 A, 40 V Enhancement, 5-Pin LFPAK PSMN1R0-40YLDX
- N° de stock RS:
- 219-426
- Référence fabricant:
- PSMN1R0-40YLDX
- Fabricant:
- Nexperia
Offre groupée disponible
Sous-total (1 ruban de 1 unité)*
2,36 €
(TVA exclue)
2,86 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 1 495 unité(s) expédiée(s) à partir du 05 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 2,36 € |
| 10 - 99 | 2,12 € |
| 100 - 499 | 1,97 € |
| 500 - 999 | 1,81 € |
| 1000 + | 1,63 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-426
- Référence fabricant:
- PSMN1R0-40YLDX
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 280A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | PSM | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 4.5 V | |
| Maximum Power Dissipation Pd | 198W | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 280A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series PSM | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 4.5 V | ||
Maximum Power Dissipation Pd 198W | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Low parasitic inductance and resistance
Avalanche rated
Wave solder able
Superfast switching with soft recovery
Liens connexes
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