Nexperia NextPower-S3 technology Type N-Channel MOSFET, 240 A, 40 V Enhancement, 5-Pin LFPAK PSMN1R4-40YLDX
- N° de stock RS:
- 219-473
- Référence fabricant:
- PSMN1R4-40YLDX
- Fabricant:
- Nexperia
Sous-total (1 bobine de 1500 unités)*
2 644,50 €
(TVA exclue)
3 199,50 €
(TVA incluse)
Ajouter 1500 unités pour bénéficier d'une livraison gratuite
Temporairement en rupture de stock
- Expédition à partir du 31 août 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1500 + | 1,763 € | 2 644,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-473
- Référence fabricant:
- PSMN1R4-40YLDX
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 240A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NextPower-S3 technology | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 238W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 240A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NextPower-S3 technology | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 238W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
The Nexperia N-Channel MOSFET features Advanced TrenchMOS Super junction technology. This product has been designed and qualified for high performance power switching applications. It is designed for high-performance applications, including synchronous rectification, DC-to-DC converters, server power supplies, brushless DC motor control and battery protection. It offers high efficiency and reliable performance across a wide range of power management tasks.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Wave solder able
Superfast switching with soft recovery
Liens connexes
- Nexperia NextPower-S3 technology Type N-Channel MOSFET 40 V Enhancement, 5-Pin LFPAK PSMN1R4-40YLDX
- Nexperia NextPower-S3 Schottky-Plus Type N-Channel MOSFET 40 V Enhancement, 5-Pin LFPAK PSMN1R4-40YSHX
- Nexperia NextPower-S3 Schottky-Plus technology Type N-Channel MOSFET 40 V Enhancement, 5-Pin LFPAK
- Nexperia NextPowerS3 Technology Type N-Channel MOSFET 30 V Enhancement, 5-Pin LFPAK PSMN1R4-30YLDX
- Nexperia PSM Type N-Channel MOSFET 40 V Enhancement, 5-Pin LFPAK PSMN3R2-40YLDX
- Nexperia PSM Type N-Channel MOSFET 40 V Enhancement, 5-Pin LFPAK PSMN1R0-40YLDX
- Nexperia NextPower Type N-Channel MOSFET 100 V Enhancement, 5-Pin LFPAK PSMN015-100YSFX
- Nexperia NextPower Type N-Channel MOSFET 100 V Enhancement, 5-Pin LFPAK PSMN012-100YSFX