Nexperia PSM Type N-Channel MOSFET, 150 A, 30 V Enhancement, 5-Pin LFPAK PSMN1R8-30MLHX
- N° de stock RS:
- 219-268
- Référence fabricant:
- PSMN1R8-30MLHX
- Fabricant:
- Nexperia
Offre groupée disponible
Sous-total (1 ruban de 1 unité)*
1,11 €
(TVA exclue)
1,34 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 1 500 unité(s) expédiée(s) à partir du 29 décembre 2025
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 1,11 € |
| 10 - 99 | 1,00 € |
| 100 - 499 | 0,92 € |
| 500 - 999 | 0,85 € |
| 1000 + | 0,77 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-268
- Référence fabricant:
- PSMN1R8-30MLHX
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | LFPAK | |
| Series | PSM | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 2.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Power Dissipation Pd | 106W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type LFPAK | ||
Series PSM | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 2.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Power Dissipation Pd 106W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
The Nexperia N-Channel MOSFET featuring NextPowerS3 technology offers low RDS, low IDSS leakage, and high efficiency, with a current rating of 150 A. Its optimized low gate resistance supports fast-switching applications. Key applications include synchronous buck regulators, synchronous rectifiers in AC to DC and DC to DC conversions, BLDC motor control, eFuse and battery protection, as well as OR-ing and hot-swap functionalities.
Fast switching
Low spiking and ringing for low EMI designs
High reliability copper clip bonded
Qualified to 175 °C
Exposed leads for optimal Visual solder inspection
Liens connexes
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