Nexperia PSM Type N-Channel MOSFET, 275 A, 30 V Enhancement, 5-Pin LFPAK PSMN1R0-30YLEX
- N° de stock RS:
- 219-357
- Référence fabricant:
- PSMN1R0-30YLEX
- Fabricant:
- Nexperia
Offre groupée disponible
Sous-total (1 ruban de 1 unité)*
3,41 €
(TVA exclue)
4,13 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Informations sur le stock actuellement non accessibles
Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 3,41 € |
| 10 - 99 | 3,08 € |
| 100 - 499 | 2,83 € |
| 500 - 999 | 2,63 € |
| 1000 + | 2,34 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-357
- Référence fabricant:
- PSMN1R0-30YLEX
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 275A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PSM | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.55mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 224W | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 275A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PSM | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.55mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 224W | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Wave solder able
Superfast switching with soft recovery
Liens connexes
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