STMicroelectronics STGD5NB120SZT4, Type N-Channel IGBT, 5 A 1200 V, 3-Pin TO-252, Surface
- N° de stock RS:
- 877-2879
- Référence fabricant:
- STGD5NB120SZT4
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
7,78 €
(TVA exclue)
9,415 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 1 890 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 1,556 € | 7,78 € |
| 25 - 45 | 1,478 € | 7,39 € |
| 50 - 120 | 1,332 € | 6,66 € |
| 125 - 245 | 1,198 € | 5,99 € |
| 250 + | 1,136 € | 5,68 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 877-2879
- Référence fabricant:
- STGD5NB120SZT4
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 5A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 75W | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 690ns | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.2mm | |
| Length | 6.2mm | |
| Series | H | |
| Standards/Approvals | JEDEC JESD97, ECOPACK | |
| Energy Rating | 12.68mJ | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 5A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 75W | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 690ns | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 2.2mm | ||
Length 6.2mm | ||
Series H | ||
Standards/Approvals JEDEC JESD97, ECOPACK | ||
Energy Rating 12.68mJ | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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