STMicroelectronics STGW30NC120HD IGBT, 60 A 1200 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 168-7744
- Référence fabricant:
- STGW30NC120HD
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 tube de 30 unités)*
76,32 €
(TVA exclue)
92,34 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 150 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 - 60 | 2,544 € | 76,32 € |
| 90 - 480 | 2,18 € | 65,40 € |
| 510 + | 2,03 € | 60,90 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 168-7744
- Référence fabricant:
- STGW30NC120HD
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Maximum Continuous Collector Current | 60 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±25V | |
| Maximum Power Dissipation | 220 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 15.75 x 5.15 x 20.15mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +150 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±25V | ||
Maximum Power Dissipation 220 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 15.75 x 5.15 x 20.15mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +150 °C | ||
- Pays d'origine :
- CN
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Liens connexes
- STMicroelectronics STGW30NC120HD IGBT 3-Pin TO-247, Through Hole
- STMicroelectronics GWA40MS120DF4AG Single IGBT 3-Pin TO-247, Through Hole
- STMicroelectronics STGW20NC60VD IGBT 3-Pin TO-247, Through Hole
- STMicroelectronics STGW30NC60WD IGBT 3-Pin TO-247, Through Hole
- STMicroelectronics STGW30H60DFB IGBT 3-Pin TO-247, Through Hole
- STMicroelectronics STGW30NC60KD IGBT 3-Pin TO-247, Through Hole
- STMicroelectronics STGW60V60DF IGBT 3-Pin TO-247, Through Hole
- STMicroelectronics STGW60V60F IGBT 3-Pin TO-247, Through Hole