STMicroelectronics STGD20N45LZAG IGBT, 25 A 475 V, 3-Pin DPAK, Surface Mount
- N° de stock RS:
- 164-7025
- Référence fabricant:
- STGD20N45LZAG
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
8,58 €
(TVA exclue)
10,38 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 27 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 1,716 € | 8,58 € |
| 25 - 45 | 1,63 € | 8,15 € |
| 50 - 120 | 1,466 € | 7,33 € |
| 125 - 245 | 1,32 € | 6,60 € |
| 250 + | 1,252 € | 6,26 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 164-7025
- Référence fabricant:
- STGD20N45LZAG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Maximum Continuous Collector Current | 25 A | |
| Maximum Collector Emitter Voltage | 475 V | |
| Maximum Gate Emitter Voltage | 16V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 125 W | |
| Package Type | DPAK | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 6.6 x 2.4 x 6.2mm | |
| Minimum Operating Temperature | -55 °C | |
| Gate Capacitance | 1011pF | |
| Automotive Standard | AEC-Q101 | |
| Energy Rating | 300mJ | |
| Maximum Operating Temperature | +175 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Maximum Continuous Collector Current 25 A | ||
Maximum Collector Emitter Voltage 475 V | ||
Maximum Gate Emitter Voltage 16V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 125 W | ||
Package Type DPAK | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 6.6 x 2.4 x 6.2mm | ||
Minimum Operating Temperature -55 °C | ||
Gate Capacitance 1011pF | ||
Automotive Standard AEC-Q101 | ||
Energy Rating 300mJ | ||
Maximum Operating Temperature +175 °C | ||
This application-specific IGBT utilizes the most advanced PowerMESH™ technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required.
SCIS energy of 300 mJ @ TJ = 25 °C
Parts are 100% tested in SCIS
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
Very low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor
Parts are 100% tested in SCIS
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
Very low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor
Liens connexes
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