STMicroelectronics STGD20N45LZAG, Type N-Channel IGBT, 25 A 450 V, 3-Pin TO-252, Surface
- N° de stock RS:
- 164-7025
- Référence fabricant:
- STGD20N45LZAG
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
8,82 €
(TVA exclue)
10,67 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 14 septembre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 1,764 € | 8,82 € |
| 25 - 45 | 1,676 € | 8,38 € |
| 50 - 120 | 1,508 € | 7,54 € |
| 125 - 245 | 1,356 € | 6,78 € |
| 250 + | 1,288 € | 6,44 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 164-7025
- Référence fabricant:
- STGD20N45LZAG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 25A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 450V | |
| Maximum Power Dissipation Pd | 150W | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 8.4μs | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.55V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 16 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.6mm | |
| Series | Automotive Grade | |
| Standards/Approvals | AEC-Q101 | |
| Height | 2.4mm | |
| Automotive Standard | AEC-Q101 | |
| Energy Rating | 300mJ | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Maximum Continuous Collector Current Ic 25A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 450V | ||
Maximum Power Dissipation Pd 150W | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 8.4μs | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.55V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 16 V | ||
Maximum Operating Temperature 175°C | ||
Length 6.6mm | ||
Series Automotive Grade | ||
Standards/Approvals AEC-Q101 | ||
Height 2.4mm | ||
Automotive Standard AEC-Q101 | ||
Energy Rating 300mJ | ||
This application-specific IGBT utilizes the most Advanced PowerMESH™ technology optimized for Coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required.
SCIS energy of 300 mJ @ TJ = 25 °C
Parts are 100% tested in SCIS
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
Very low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor
Liens connexes
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