Fuji 2MBi300VH-120-50 Series IGBT Module, 360 A 1200 V, 7-Pin M276, Screw Mount
- N° de stock RS:
- 747-1099
- Référence fabricant:
- 2MBi300VH-120-50
- Fabricant:
- Fuji
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131,75 €
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159,42 €
(TVA incluse)
- N° de stock RS:
- 747-1099
- Référence fabricant:
- 2MBi300VH-120-50
- Fabricant:
- Fuji
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Fuji | |
| Maximum Continuous Collector Current | 360 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 1.6 kW | |
| Configuration | Series | |
| Package Type | M276 | |
| Mounting Type | Screw Mount | |
| Channel Type | N | |
| Pin Count | 7 | |
| Dimensions | 108 x 62 x 30.5mm | |
| Maximum Operating Temperature | +150 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque Fuji | ||
Maximum Continuous Collector Current 360 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 1.6 kW | ||
Configuration Series | ||
Package Type M276 | ||
Mounting Type Screw Mount | ||
Channel Type N | ||
Pin Count 7 | ||
Dimensions 108 x 62 x 30.5mm | ||
Maximum Operating Temperature +150 °C | ||
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IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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