Fuji Electric FGW40N120VD IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 772-9051P
- Référence fabricant:
- FGW40N120VD
- Fabricant:
- Fuji Electric
Offre groupée disponible
Sous-total 5 unités (conditionné en tube)*
48,70 €
(TVA exclue)
58,95 €
(TVA incluse)
Ajouter 8 unités pour bénéficier d'une livraison gratuite
Informations sur le stock actuellement non accessibles
Unité | Prix par unité |
|---|---|
| 5 - 14 | 9,74 € |
| 15 - 29 | 9,23 € |
| 30 - 59 | 8,71 € |
| 60 + | 8,21 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 772-9051P
- Référence fabricant:
- FGW40N120VD
- Fabricant:
- Fuji Electric
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Fuji Electric | |
| Maximum Continuous Collector Current | 40 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 340 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 15.9 x 5.03 x 20.95mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +175 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque Fuji Electric | ||
Maximum Continuous Collector Current 40 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 340 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.9 x 5.03 x 20.95mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +175 °C | ||
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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