IXYS MIXA225PF1200TSF, Type N-Channel IGBT Module, 360 A 1200 V, 11-Pin SimBus F, PCB
- N° de stock RS:
- 124-0710
- Référence fabricant:
- MIXA225PF1200TSF
- Fabricant:
- IXYS
Offre groupée disponible
Sous-total (1 unité)*
127,21 €
(TVA exclue)
153,92 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 23 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 4 | 127,21 € |
| 5 - 9 | 123,90 € |
| 10 - 24 | 120,71 € |
| 25 + | 117,68 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 124-0710
- Référence fabricant:
- MIXA225PF1200TSF
- Fabricant:
- IXYS
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | IXYS | |
| Maximum Continuous Collector Current Ic | 360A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 1100W | |
| Number of Transistors | 2 | |
| Package Type | SimBus F | |
| Mount Type | PCB | |
| Channel Type | Type N | |
| Pin Count | 11 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.8V | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | -40°C | |
| Height | 17mm | |
| Standards/Approvals | No | |
| Series | MIXA225PF1200TSF | |
| Length | 152mm | |
| Width | 62 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque IXYS | ||
Maximum Continuous Collector Current Ic 360A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 1100W | ||
Number of Transistors 2 | ||
Package Type SimBus F | ||
Mount Type PCB | ||
Channel Type Type N | ||
Pin Count 11 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.8V | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature -40°C | ||
Height 17mm | ||
Standards/Approvals No | ||
Series MIXA225PF1200TSF | ||
Length 152mm | ||
Width 62 mm | ||
Automotive Standard No | ||
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Liens connexes
- IXYS MIXA225PF1200TSF Dual IGBT Module 11-Pin SimBus F, PCB Mount
- IXYS MIXA450PF1200TSF Dual IGBT Module 11-Pin SimBus F, PCB Mount
- Starpower GD450HFY120C6S Dual IGBT Module 11-Pin Module
- Infineon FF600R12ME4B72BOSA1 Dual IGBT Module 11-Pin ECONODUAL
- Starpower GD300HFY120C6S Dual IGBT Module 11-Pin Module
- IXYS IXA27IF1200HJ IGBT 3-Pin ISOPLUS247, Through Hole
- Infineon FF900R12ME7B11BOSA1 Dual IGBT, 900 A 1200 V AG-ECONOD
- Infineon IFF600B12ME4PB11BPSA1 Dual IGBT Module, 600 A 1200 V ECONOD