Fuji Electric 7MBR50VB-120-50 3 Phase Bridge IGBT Module, 50 A 1200 V, 24-Pin M712, Through Hole

Voir l’ensemble des IGBTs
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N° de stock RS:
110-9135
Référence fabricant:
7MBR50VB-120-50
Fabricant:
Fuji Electric
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Marque

Fuji Electric

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

280 W

Package Type

M712

Configuration

3 Phase Bridge

Mounting Type

Through Hole

Channel Type

N

Pin Count

24

Transistor Configuration

3 Phase

Dimensions

122 x 62 x 17mm

Maximum Operating Temperature

+150 °C

IGBT Modules 7-Pack, Fuji Electric


V-Series


IGBT Discretes & Modules, Fuji Electric


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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