STMicroelectronics STGWA25IH135DF2, Bi-Directional-Channel Single Collector IGBT, 25 A 1350 V, 3-Pin TO-247, Through
- N° de stock RS:
- 275-1346
- Référence fabricant:
- STGWA25IH135DF2
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
3,20 €
(TVA exclue)
3,87 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 126 unité(s) expédiée(s) à partir du 20 juillet 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 3,20 € |
| 10 - 119 | 2,17 € |
| 120 - 509 | 1,92 € |
| 510 - 1019 | 1,90 € |
| 1020 + | 1,87 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 275-1346
- Référence fabricant:
- STGWA25IH135DF2
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 25A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1350V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation Pd | 340W | |
| Configuration | Single Collector | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Bi-Directional | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 15.8mm | |
| Height | 21mm | |
| Length | 19.92mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Maximum Continuous Collector Current Ic 25A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1350V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation Pd 340W | ||
Configuration Single Collector | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Bi-Directional | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 15.8mm | ||
Height 21mm | ||
Length 19.92mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics IGBT 1350 V IH2 series has been developed using an Advanced proprietary trench gate field stop structure, whose performance is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included. The result is a product specifically designed to maximize efficiency for any resonant and soft switching applications.
Designed for soft commutation
Minimized tail current
Tight parameter distribution
Low thermal resistance
Liens connexes
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