Infineon IHW30N135R5XKSA1, N-Channel IGBT, 30 A 1.35 kV, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 218-4397
- Référence fabricant:
- IHW30N135R5XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
21,30 €
(TVA exclue)
25,75 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 30 unité(s) expédiée(s) à partir du 26 octobre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 4,26 € | 21,30 € |
| 25 - 45 | 3,622 € | 18,11 € |
| 50 - 120 | 3,408 € | 17,04 € |
| 125 - 245 | 3,154 € | 15,77 € |
| 250 + | 2,94 € | 14,70 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 218-4397
- Référence fabricant:
- IHW30N135R5XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current Ic | 30A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1.35kV | |
| Maximum Power Dissipation Pd | 330W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±25 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 16.13mm | |
| Standards/Approvals | JESD-022 | |
| Length | 21.1mm | |
| Height | 5.21mm | |
| Series | IHW30N135R5 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current Ic 30A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1.35kV | ||
Maximum Power Dissipation Pd 330W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 ±25 V | ||
Maximum Operating Temperature 175°C | ||
Width 16.13mm | ||
Standards/Approvals JESD-022 | ||
Length 21.1mm | ||
Height 5.21mm | ||
Series IHW30N135R5 | ||
Automotive Standard No | ||
Infineon IHW30N135R5 Series IGBT, 330W Maximum Power Dissipation, 30A Max Continuous Collector Current - IHW30N135R5XKSA1
This IGBT is a high-voltage switching transistor designed for power conversion and control in demanding industrial environments. It is supplied in a TO-247 through-hole package with three pins and is intended for applications requiring elevated voltage handling and substantial current conduction while operating across a wide temperature range.
Features and Benefits:
• 1350 V rating enables operation in high-voltage systems
• 30 A continuous current supports heavy load driving
• 330 W power dissipation allows sustained power handling
• 1.65 V VCE(sat) yields reduced conduction losses under load
• ±20 V gate-emitter tolerance permits robust gate drive swings
• −40 °C to 175 °C temperature range maintains performance in harsh environments
• 30 A continuous current supports heavy load driving
• 330 W power dissipation allows sustained power handling
• 1.65 V VCE(sat) yields reduced conduction losses under load
• ±20 V gate-emitter tolerance permits robust gate drive swings
• −40 °C to 175 °C temperature range maintains performance in harsh environments
Applications
• Suitable for high-voltage motor drive stages
• Ideal for industrial inverter and converter designs
• Used with power supplies requiring through-hole mounting
• Can be used for traction and utility power electronics
• Appropriate for fast-switching high-voltage circuits
• Ideal for industrial inverter and converter designs
• Used with power supplies requiring through-hole mounting
• Can be used for traction and utility power electronics
• Appropriate for fast-switching high-voltage circuits
What is the device’s package and mounting style?
It is supplied in a TO-247 package and designed for through-hole mounting on power assemblies.
How does the device behave thermally under continuous operation?
It can dissipate up to 330 W and is specified for operation up to 175 °C case or junction temperatures.
What gate drive limits must be observed?
The gate-emitter rating is ±20 V, so drive circuits should remain within that voltage range.
What switching or conduction capability is provided for load design?
The device supports continuous collector currents up to 30 A with a maximum collector-emitter saturation of 1.65 V.
Are there recognised standards associated with the device?
It conforms to JESD-022 moisture sensitivity classification for handling and storage.
Liens connexes
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