Infineon IHW30N135R5XKSA1, Type N-Channel IGBT, 30 A 1350 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 218-4397
- Référence fabricant:
- IHW30N135R5XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
21,30 €
(TVA exclue)
25,75 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Stock limité
- Plus 80 unité(s) expédiée(s) à partir du 20 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 4,26 € | 21,30 € |
| 25 - 45 | 3,622 € | 18,11 € |
| 50 - 120 | 3,408 € | 17,04 € |
| 125 - 245 | 3,154 € | 15,77 € |
| 250 + | 2,94 € | 14,70 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 218-4397
- Référence fabricant:
- IHW30N135R5XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current Ic | 30A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1350V | |
| Maximum Power Dissipation Pd | 330W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±25 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JESD-022 | |
| Height | 5.21mm | |
| Length | 21.1mm | |
| Series | IHW30N135R5 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current Ic 30A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1350V | ||
Maximum Power Dissipation Pd 330W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 ±25 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JESD-022 | ||
Height 5.21mm | ||
Length 21.1mm | ||
Series IHW30N135R5 | ||
Automotive Standard No | ||
The Infineon IHW series reverse conducting IGBT with monolithically integrated diode in a TO-247 package focusing on system efficiency and reliability for the demanding requirements of induction cooking. It has collector emitter voltage of 1350 V and 30 A of collector current.
Increased switching frequency
Lowest power dissipation
Better thermal management for higher reliability
Lower EMI filtering requirements
Reduced system costs
Highest reliability against peak current
Liens connexes
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