Infineon IHW20N135R5XKSA1, N-Channel IGBT Single Transistor IC, 40 A 1350 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 215-6636
- Référence fabricant:
- IHW20N135R5XKSA1
- Fabricant:
- Infineon
Sous-total (1 paquet de 5 unités)*
18,60 €
(TVA exclue)
22,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- Plus 5 unité(s) expédiée(s) à partir du 09 septembre 2026
- Plus 50 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 140 unité(s) expédiée(s) à partir du 16 septembre 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 3,72 € | 18,60 € |
| 25 - 45 | 3,348 € | 16,74 € |
| 50 - 120 | 3,124 € | 15,62 € |
| 125 - 245 | 2,94 € | 14,70 € |
| 250 + | 2,716 € | 13,58 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 215-6636
- Référence fabricant:
- IHW20N135R5XKSA1
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current Ic | 40A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 1350V | |
| Maximum Power Dissipation Pd | 310W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Maximum Gate Emitter Voltage VGEO | ±25 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.21mm | |
| Series | Resonant Switching | |
| Width | 16.13mm | |
| Standards/Approvals | IEC61249-2-21, RoHS | |
| Length | 42mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current Ic 40A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 1350V | ||
Maximum Power Dissipation Pd 310W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Maximum Gate Emitter Voltage VGEO ±25 V | ||
Maximum Operating Temperature 175°C | ||
Height 5.21mm | ||
Series Resonant Switching | ||
Width 16.13mm | ||
Standards/Approvals IEC61249-2-21, RoHS | ||
Length 42mm | ||
Automotive Standard No | ||
Infineon Resonant Switching Series IGBT Single Transistor IC, 1350V Max Collector Emitter Voltage, 40A Max Continuous Collector Current - IHW20N135R5XKSA1
Features and Benefits:
• 40A continuous collector current supports heavy load currents
• 1.85V VCE(sat) reduces conduction losses under load
• ±25V gate-emitter tolerance allows wide drive voltages
• 310W power dissipation permits high-power switching
• -40 to 175 °C operational range sustains extreme temperatures
Applications
• Ideal for industrial motor drive inverter stages
• Used with high-voltage switch-mode power supplies
• Can be used for utility-grade power conversion modules
• Suitable for high-power DC-DC converter topologies
What mounting approach does this device require?
How does the transistor manage heat in continuous operation?
What gate-drive constraints must be observed?
Are there material or regulatory restrictions relevant to design?
Liens connexes
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- Infineon IGBT Single Transistor IC 3-Pin TO-247, Through Hole
