Références fabricant

Infineon IHW30N135R5XKSA1, N-Channel IGBT, 30 A 1.35 kV, 3-Pin TO-247, Through Hole

N° de stock RS:: 218-4395
Référence fabricant:: IHW30N135R5XKSA1
Fabricant:: Infineon

Infineon IHW30N135R5XKSA1, N-Channel IGBT, 30 A 1.35 kV, 3-Pin TO-247, Through Hole

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Consulter les options de prix de gros

Sous-total (1 tube de 30 unités)*

74,88 €

(TVA exclue)

90,60 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

Plus 30 unité(s) expédiée(s) à partir du 26 octobre 2026

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Unité	Prix par unité	le tube*
30 - 30	2,496 €	74,88 €
60 - 120	2,371 €	71,13 €
150 - 270	2,271 €	68,13 €
300 - 570	2,172 €	65,16 €
600 +	2,022 €	60,66 €

*Prix donné à titre indicatif

N° de stock RS:: 218-4395
Référence fabricant:: IHW30N135R5XKSA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Maximum Continuous Collector Current Ic	30A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	1.35kV
	Number of Transistors	1
	Maximum Power Dissipation Pd	330W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	N
	Pin Count	3
	Maximum Gate Emitter Voltage VGEO	±20 ±25 V
	Maximum Collector Emitter Saturation Voltage VceSAT	1.65V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Width	16.13mm
	Series	IHW30N135R5
	Length	21.1mm
	Standards/Approvals	JESD-022
	Height	5.21mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Maximum Continuous Collector Current Ic 30A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 1.35kV
	Number of Transistors 1
	Maximum Power Dissipation Pd 330W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type N
	Pin Count 3
	Maximum Gate Emitter Voltage VGEO ±20 ±25 V
	Maximum Collector Emitter Saturation Voltage VceSAT 1.65V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Width 16.13mm
	Series IHW30N135R5
	Length 21.1mm
	Standards/Approvals JESD-022
	Height 5.21mm
	Automotive Standard No

Datasheet - IHW30N135R5XKSA1

Infineon IHW30N135R5 Series IGBT, 330W Maximum Power Dissipation, 30A Max Continuous Collector Current - IHW30N135R5XKSA1

This IGBT is a high-voltage switching transistor designed for power conversion and control in demanding industrial environments. It is supplied in a TO-247 through-hole package with three pins and is intended for applications requiring elevated voltage handling and substantial current conduction while operating across a wide temperature range.

Features and Benefits:

• 1350 V rating enables operation in high-voltage systems
• 30 A continuous current supports heavy load driving
• 330 W power dissipation allows sustained power handling
• 1.65 V VCE(sat) yields reduced conduction losses under load
• ±20 V gate-emitter tolerance permits robust gate drive swings
• −40 °C to 175 °C temperature range maintains performance in harsh environments

Applications

• Suitable for high-voltage motor drive stages
• Ideal for industrial inverter and converter designs
• Used with power supplies requiring through-hole mounting
• Can be used for traction and utility power electronics
• Appropriate for fast-switching high-voltage circuits

What is the device’s package and mounting style?

It is supplied in a TO-247 package and designed for through-hole mounting on power assemblies.

How does the device behave thermally under continuous operation?

It can dissipate up to 330 W and is specified for operation up to 175 °C case or junction temperatures.

What gate drive limits must be observed?

The gate-emitter rating is ±20 V, so drive circuits should remain within that voltage range.

What switching or conduction capability is provided for load design?

The device supports continuous collector currents up to 30 A with a maximum collector-emitter saturation of 1.65 V.

Are there recognised standards associated with the device?

It conforms to JESD-022 moisture sensitivity classification for handling and storage.

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