Infineon IHW30N135R3FKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 110-7449
- Référence fabricant:
- IHW30N135R3FKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 3 unités)*
14,661 €
(TVA exclue)
17,739 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En voie de retrait du marché
- Plus 6 unité(s) expédiée(s) à partir du 09 février 2026
- 12 unité(s) finale(s) expédiée(s) à partir du 16 février 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 3 - 12 | 4,887 € | 14,66 € |
| 15 - 27 | 4,397 € | 13,19 € |
| 30 - 72 | 4,107 € | 12,32 € |
| 75 - 147 | 3,81 € | 11,43 € |
| 150 + | 3,517 € | 10,55 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 110-7449
- Référence fabricant:
- IHW30N135R3FKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current | 30 A | |
| Maximum Collector Emitter Voltage | 1350 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 349 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 16.13 x 5.21 x 21.1mm | |
| Gate Capacitance | 2066pF | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +175 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 1350 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 349 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 16.13 x 5.21 x 21.1mm | ||
Gate Capacitance 2066pF | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +175 °C | ||
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Liens connexes
- Infineon IHW30N135R5XKSA1 IGBT 3-Pin TO-247
- Infineon IGW15T120FKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IKW15N120H3FKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IKWH30N65WR6XKSA1 Single IGBT 3-Pin TO-247-3-HCC, Through Hole
- Infineon IKWH30N65WR5XKSA1 Single IGBT 3-Pin TO-247-3-HCC, Through Hole
- Infineon IHW30N160R5XKSA1 IGBT 3-Pin TO-247
- Infineon IHW30N110R5XKSA1 IGBT 3-Pin TO-247, Surface Mount
- Infineon IGW25N120H3FKSA1 IGBT 3-Pin TO-247, Through Hole