Infineon IKWH30N65WR5XKSA1 Single IGBT, 30 A 650 V, 3-Pin TO-247-3-HCC, Through Hole
- N° de stock RS:
- 232-6736
- Référence fabricant:
- IKWH30N65WR5XKSA1
- Fabricant:
- Infineon
Sous-total (1 paquet de 2 unités)*
2,26 €
(TVA exclue)
2,74 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 118 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 + | 1,13 € | 2,26 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 232-6736
- Référence fabricant:
- IKWH30N65WR5XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current | 30 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 95 W | |
| Number of Transistors | 1 | |
| Configuration | Single | |
| Package Type | TO-247-3-HCC | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 95 W | ||
Number of Transistors 1 | ||
Configuration Single | ||
Package Type TO-247-3-HCC | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
The Infineon's 30 A reverse conducting TRENCHSTOP 5 WR5 IGBT comes in high creep age and clearance TO-247-3-HCC package. It is specifically optimized for PFC stage in RAC / CAC and DC/DC in Welding application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance technology also for price sensitive customers. WR5 IGBT in TO-247-3-HCC also enable more reliable design with the increased clearance and creep age distances.
Monolithically integrated diode
Stable temperature behaviour
Improved reliability against package contamination
Stable temperature behaviour
Improved reliability against package contamination
Liens connexes
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