Infineon IKWH30N65WR5XKSA1, N-Channel IGBT, 60 A 650 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 232-6735
- Référence fabricant:
- IKWH30N65WR5XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 30 unités)*
57,60 €
(TVA exclue)
69,60 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 30 unité(s) expédiée(s) à partir du 11 novembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 - 30 | 1,92 € | 57,60 € |
| 60 - 120 | 1,824 € | 54,72 € |
| 150 - 270 | 1,748 € | 52,44 € |
| 300 - 570 | 1,671 € | 50,13 € |
| 600 + | 1,594 € | 47,82 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 232-6735
- Référence fabricant:
- IKWH30N65WR5XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current Ic | 60A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 190W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 21.1mm | |
| Height | 5.21mm | |
| Width | 16.13mm | |
| Series | IKWH30N65WR5 | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current Ic 60A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 190W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 21.1mm | ||
Height 5.21mm | ||
Width 16.13mm | ||
Series IKWH30N65WR5 | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon's 30 A reverse conducting TRENCHSTOP 5 WR5 IGBT comes in high creep age and clearance TO-247-3-HCC package. It is specifically optimized for PFC stage in RAC / CAC and DC/DC in Welding application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance technology also for price sensitive customers. WR5 IGBT in TO-247-3-HCC also enable more reliable design with the increased clearance and creep age distances.
Monolithically integrated diode
Stable temperature behaviour
Improved reliability against package contamination
Liens connexes
- Infineon IKWH30N65WR5XKSA1 60 A 650 V Through Hole
- Infineon 60 A 650 V Through Hole
- Infineon IKWH60N65WR6XKSA1 60 A 650 V Through Hole
- Infineon IHW30N65R5XKSA1 60 A 650 V Through Hole
- Infineon 40 A 650 V Through Hole
- Infineon 62 A 650 V Through Hole
- Infineon 50 A 650 V Through Hole
- Infineon IKZ75N65EL5XKSA1 100 A 650 V Through Hole