Infineon, Type N-Channel IGBT, 75 A 650 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 218-4391
- Référence fabricant:
- IGW75N65H5XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 30 unités)*
74,16 €
(TVA exclue)
89,73 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 240 unité(s) expédiée(s) à partir du 03 décembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 - 30 | 2,472 € | 74,16 € |
| 60 - 120 | 2,348 € | 70,44 € |
| 150 + | 2,249 € | 67,47 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 218-4391
- Référence fabricant:
- IGW75N65H5XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 75A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 198W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 21.1mm | |
| Series | IGW75N65H5 | |
| Standards/Approvals | JEDEC, RoHS | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 75A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 198W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 21.1mm | ||
Series IGW75N65H5 | ||
Standards/Approvals JEDEC, RoHS | ||
Height 5.21mm | ||
Automotive Standard No | ||
The Infineon TRENCHSTOP IGBT5 technology redefines best-in-class IGBT resulting in lower junction and case temperature leading to higher device reliability by providing unmatched performance in terms of efficiency for hard switching applications. It has collector emitter voltage of 650 V and collector current of 120 A.
Higher power density design
50V increase in the bus voltage possible without compromising reliability
Mild positive temperature coefficient
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