Références fabricant

Infineon FF600R12ME4B72BOSA1, N-Channel IGBT Module, 600 A 1.2 kV, 11-Pin ECONODUAL, Surface

N° de stock RS:: 218-4340
Référence fabricant:: FF600R12ME4B72BOSA1
Fabricant:: Infineon

Infineon FF600R12ME4B72BOSA1, N-Channel IGBT Module, 600 A 1.2 kV, 11-Pin ECONODUAL, Surface

Sous-total (1 plateau de 10 unités)*

1 700,72 €

(TVA exclue)

2 057,87 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 15 avril 2027

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Unité	Prix par unité	le plateau*
10 +	170,072 €	1 700,72 €

*Prix donné à titre indicatif

N° de stock RS:: 218-4340
Référence fabricant:: FF600R12ME4B72BOSA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Maximum Continuous Collector Current Ic	600A
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1.2kV
	Number of Transistors	2
	Maximum Power Dissipation Pd	20mW
	Package Type	ECONODUAL
	Mount Type	Surface
	Channel Type	N
	Pin Count	11
	Maximum Collector Emitter Saturation Voltage VceSAT	2.1V
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Width	62mm
	Standards/Approvals	No
	Height	20.8mm
	Length	152mm
	Series	FF600R12ME4_B72
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Maximum Continuous Collector Current Ic 600A
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1.2kV
	Number of Transistors 2
	Maximum Power Dissipation Pd 20mW
	Package Type ECONODUAL
	Mount Type Surface
	Channel Type N
	Pin Count 11
	Maximum Collector Emitter Saturation Voltage VceSAT 2.1V
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Width 62mm
	Standards/Approvals No
	Height 20.8mm
	Length 152mm
	Series FF600R12ME4_B72
	Automotive Standard No

Datasheet - FF600R12ME4B72BOSA1

Infineon FF600R12ME4_B72 Series IGBT Module, 1200V Collector-Emitter Voltage, 600A Collector Current - FF600R12ME4B72BOSA1

This IGBT module provides high-voltage switching for demanding power applications, combining dual-transistor topology with a Compact surface-mount ECONODUAL package. It is designed to handle large continuous currents while operating across a wide temperature range, making it suitable for industrial power conversion and motor-control environments.

Features and Benefits:

• 1200 V blocking voltage delivers high-voltage switching capability
• 600 A continuous collector current enables heavy-load handling
• Low VCE(sat) 2.1 V reduces conduction losses during operation
• 20 mW maximum power dissipation minimises internal power loss
• Type N gate-emitter 20 V rating allows standard gate-drive voltages
• Dual-transistor configuration supports half-bridge and inverter topologies

Applications

• Suitable for industrial motor-drive power stages
• Used with high-voltage inverter systems in industry
• Ideal for heavy-current converter modules
• Can be used for power supplies requiring robust switching
• Suitable for traction and large-drive requiring dual switches

What pin configuration does it use for PCB integration?

The device uses an 11-pin layout formatted for surface mounting in an ECONODUAL package.

What are the allowable ambient temperature limits for operation?

It operates reliably between -40 °C and 150 °C maximum operating temperature.

How many transistors are incorporated and what topology does that support?

The module contains two transistors enabling dual-switch arrangements such as half-bridges.

What physical size should I allow for in the assembly layout?

The component measures 152 x 62 x 20.8 mm so allocate corresponding space on the assembly.

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