STMicroelectronics STGWA30H65DFB2, Type N-Channel IGBT, 50 A 650 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 204-9877
- Référence fabricant:
- STGWA30H65DFB2
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 tube de 30 unités)*
59,94 €
(TVA exclue)
72,54 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 630 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 30 - 90 | 1,998 € | 59,94 € |
| 120 - 270 | 1,84 € | 55,20 € |
| 300 - 570 | 1,792 € | 53,76 € |
| 600 - 1170 | 1,746 € | 52,38 € |
| 1200 + | 1,702 € | 51,06 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 204-9877
- Référence fabricant:
- STGWA30H65DFB2
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 167W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.1mm | |
| Length | 15.9mm | |
| Standards/Approvals | RoHS | |
| Series | STG | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 167W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Maximum Operating Temperature 175°C | ||
Height 5.1mm | ||
Length 15.9mm | ||
Standards/Approvals RoHS | ||
Series STG | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Liens connexes
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