STMicroelectronics STGWA40H65DFB2, N-Channel IGBT, 40 A 650 V, 3-Pin TO-247
- N° de stock RS:
- 202-5517
- Référence fabricant:
- STGWA40H65DFB2
- Fabricant:
- STMicroelectronics
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 202-5517
- Référence fabricant:
- STGWA40H65DFB2
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | N | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current (Ic) | 40 A | |
| Maximum Collector Emitter Voltage (Vceo) | 650 V | |
| Pin Count | 3 | |
| Package Type | TO-247 | |
| Maximum Gate Emitter Voltage (VGEO) | 20 V | |
| Number of Transistors | 1 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type N | ||
Product Type IGBT | ||
Maximum Continuous Collector Current (Ic) 40 A | ||
Maximum Collector Emitter Voltage (Vceo) 650 V | ||
Pin Count 3 | ||
Package Type TO-247 | ||
Maximum Gate Emitter Voltage (VGEO) 20 V | ||
Number of Transistors 1 | ||
The STMicroelectronics high-speed HB2 series IGBT represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
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