STMicroelectronics STGP20H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-220

Voir l’ensemble des IGBTs
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N° de stock RS:
204-9875
Référence fabricant:
STGP20H65DFB2
Fabricant:
STMicroelectronics
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Marque

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

40A

Maximum Collector Emitter Voltage Vceo

650V

Number of Transistors

1

Package Type

TO-220

Pin Count

3

Maximum Gate Emitter Voltage VGEO

20 V

Pays d'origine :
CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature : TJ = 175 °C

Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A

Very fast and soft recovery co-packaged diode

Minimized tail current

Tight parameter distribution

Low thermal resistance

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