Infineon FF1600R12IP7BOSA1 Half Bridge IGBT, 1.6 kA 1200 V, Screw Mount
- N° de stock RS:
- 349-361
- Référence fabricant:
- FF1600R12IP7BOSA1
- Fabricant:
- Infineon
Sous-total (1 unité)*
875,94 €
(TVA exclue)
1 059,89 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 3 unité(s) expédiée(s) à partir du 19 janvier 2026
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Unité | Prix par unité |
|---|---|
| 1 + | 875,94 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-361
- Référence fabricant:
- FF1600R12IP7BOSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
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Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current | 1.6 kA | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 20 mW | |
| Number of Transistors | 2 | |
| Configuration | Half Bridge | |
| Mounting Type | Screw Mount | |
| Channel Type | N | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current 1.6 kA | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 20 mW | ||
Number of Transistors 2 | ||
Configuration Half Bridge | ||
Mounting Type Screw Mount | ||
Channel Type N | ||
- Pays d'origine :
- DE
The Infineon PrimePACK 2 1200 V 1600 A Dual IGBT Module with TRENCHSTOP IGBT7 and Emitter Controlled 7 Diode is designed for high power applications, offering exceptional performance in a compact and robust package. It delivers the highest power density, optimizing space while maintaining outstanding power handling capabilities. The module features best-in-class VCEsat, ensuring low saturation voltage for higher efficiency and reduced energy losses.
Increase in power density
Less cooling effort for same output power
Higher inverter output current
Avoidance of paralleling of IGBT modules
Standardized housing
Less cooling effort for same output power
Higher inverter output current
Avoidance of paralleling of IGBT modules
Standardized housing
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