Infineon FF2400R12IP7BPSA1, Type N-Channel Half Bridge IGBT, 2400 A 1200 V Module, Screw
- N° de stock RS:
- 349-362
- Référence fabricant:
- FF2400R12IP7BPSA1
- Fabricant:
- Infineon
Sous-total (1 unité)*
1 019,39 €
(TVA exclue)
1 233,46 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 2 unité(s) expédiée(s) à partir du 10 juin 2026
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Unité | Prix par unité |
|---|---|
| 1 + | 1 019,39 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-362
- Référence fabricant:
- FF2400R12IP7BPSA1
- Fabricant:
- Infineon
Spécifications
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current Ic | 2400A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation Pd | 20mW | |
| Configuration | Half Bridge | |
| Package Type | Module | |
| Mount Type | Screw | |
| Channel Type | Type N | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 38.25mm | |
| Standards/Approvals | IEC 60749, IEC 60747, IEC 60068 | |
| Length | 247mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current Ic 2400A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation Pd 20mW | ||
Configuration Half Bridge | ||
Package Type Module | ||
Mount Type Screw | ||
Channel Type Type N | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 38.25mm | ||
Standards/Approvals IEC 60749, IEC 60747, IEC 60068 | ||
Length 247mm | ||
Automotive Standard No | ||
- Pays d'origine :
- DE
The Infineon PrimePACK 3+ Dual IGBT Module with TRENCHSTOP IGBT7, Emitter Controlled 7 Diode, and NTC is designed for ultra-high power applications, providing superior performance and efficiency. It offers the highest power density, optimizing both space and power handling for demanding industrial uses. The module features best-in-class VCEsat, delivering low saturation voltage to maximize efficiency and minimize energy losses.
Increase in power density
Less cooling effort for same output power
High power density enables frame jump
Avoidance of paralleling of IGBT modules
Standardized Housing
Liens connexes
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