Infineon FS03MR12A7MA2BHPSA1 Half Bridge IGBT, 310 A 1200 V, Screw Mount
- N° de stock RS:
- 349-191
- Référence fabricant:
- FS03MR12A7MA2BHPSA1
- Fabricant:
- Infineon
Sous-total (1 unité)*
2 018,70 €
(TVA exclue)
2 442,63 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 01 février 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 + | 2 018,70 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-191
- Référence fabricant:
- FS03MR12A7MA2BHPSA1
- Fabricant:
- Infineon
Spécifications
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Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current | 310 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±19V | |
| Number of Transistors | 6 | |
| Configuration | Half Bridge | |
| Mounting Type | Screw Mount | |
| Channel Type | N | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current 310 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±19V | ||
Number of Transistors 6 | ||
Configuration Half Bridge | ||
Mounting Type Screw Mount | ||
Channel Type N | ||
- Pays d'origine :
- DE
The Infineon Power module implements the second generation CoolSiC Automotive MOSFET 1200V. Its an optimized for electric drive train applications, from mid to high range automotive power classes to high range commercial, construction and agricultural vehicles.
High power density
Direct cooled PinFin base plate
Integrated temp sensing diode
PressFIT contact technology
Compact design
Higher temperature cycling capability
Integrated diode temperature sensors
New plastic material
Better temperature capability
Direct cooled PinFin base plate
Integrated temp sensing diode
PressFIT contact technology
Compact design
Higher temperature cycling capability
Integrated diode temperature sensors
New plastic material
Better temperature capability
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