STMicroelectronics GH50H65DRB2-7AG IGBT, 108 A 650 V, 7-Pin H2PAK-7, Surface
- N° de stock RS:
- 330-362
- Référence fabricant:
- GH50H65DRB2-7AG
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
2,10 €
(TVA exclue)
2,54 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 1 850 unité(s) expédiée(s) à partir du 20 février 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 2,10 € |
| 10 - 99 | 1,93 € |
| 100 - 499 | 1,88 € |
| 500 - 999 | 1,84 € |
| 1000 + | 1,79 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 330-362
- Référence fabricant:
- GH50H65DRB2-7AG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 108A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 385W | |
| Number of Transistors | 1 | |
| Package Type | H2PAK-7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.8mm | |
| Length | 15.25mm | |
| Width | 24.3 mm | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Maximum Continuous Collector Current Ic 108A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 385W | ||
Number of Transistors 1 | ||
Package Type H2PAK-7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.8mm | ||
Length 15.25mm | ||
Width 24.3 mm | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
The STMicroelectronics newest IGBT 650 HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
AEC-Q101 qualified
Maximum junction temperature TJ equal to 175 °C
High speed switching series
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
Co-packed with high ruggedness rectifier diode
Excellent switching performance thanks to the extra driving kelvin pin
Liens connexes
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK SCTH35N65G2V-7AG
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Depletion, 7-Pin H2PAK SCTH100N65G2-7AG
- STMicroelectronics N-Channel STH65N Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK-7 STH65N050DM9-7AG
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK
- STMicroelectronics N-Channel STH65N Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK-7
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Depletion, 7-Pin H2PAK
- STMicroelectronics STGH30H65DFB-2AG Single IGBT, 60 A 650 V H2PAK-2
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK-7