STMicroelectronics GH50H65DRB2-7AG IGBT, 108 A 650 V, 7-Pin H2PAK-7, Surface Mount
- N° de stock RS:
- 330-362
- Référence fabricant:
- GH50H65DRB2-7AG
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
2,10 €
(TVA exclue)
2,54 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 1 850 unité(s) expédiée(s) à partir du 30 décembre 2025
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 2,10 € |
| 10 - 99 | 1,93 € |
| 100 - 499 | 1,88 € |
| 500 - 999 | 1,84 € |
| 1000 + | 1,79 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 330-362
- Référence fabricant:
- GH50H65DRB2-7AG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Maximum Continuous Collector Current | 108 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 385 W | |
| Package Type | H2PAK-7 | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Maximum Continuous Collector Current 108 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 385 W | ||
Package Type H2PAK-7 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
- Pays d'origine :
- CN
The STMicroelectronics newest IGBT 650 HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
AEC-Q101 qualified
Maximum junction temperature TJ equal to 175 °C
High speed switching series
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
Co-packed with high ruggedness rectifier diode
Excellent switching performance thanks to the extra driving kelvin pin
Maximum junction temperature TJ equal to 175 °C
High speed switching series
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
Co-packed with high ruggedness rectifier diode
Excellent switching performance thanks to the extra driving kelvin pin
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