STMicroelectronics STGH30H65DFB-2AG IGBT, 30 A 650 V H2PAK-2, Through Hole
- N° de stock RS:
- 248-4894
- Référence fabricant:
- STGH30H65DFB-2AG
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
3,60 €
(TVA exclue)
4,36 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 456 unité(s) expédiée(s) à partir du 16 avril 2026
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Unité | Prix par unité |
|---|---|
| 1 - 4 | 3,60 € |
| 5 - 9 | 3,43 € |
| 10 - 24 | 3,08 € |
| 25 - 49 | 2,77 € |
| 50 + | 2,63 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 248-4894
- Référence fabricant:
- STGH30H65DFB-2AG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 30A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 260W | |
| Package Type | H2PAK-2 | |
| Mount Type | Through Hole | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.55V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.4mm | |
| Standards/Approvals | RoHS | |
| Series | STGH30H65DFB | |
| Height | 4.7mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 30A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 260W | ||
Package Type H2PAK-2 | ||
Mount Type Through Hole | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.55V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.4mm | ||
Standards/Approvals RoHS | ||
Series STGH30H65DFB | ||
Height 4.7mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics product is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCEsat temperature coefficient and very tight parameter distribution result in safer paralleling operation.
AEC-Q101 qualified
High speed switching series
Safer paralleling
Tight parameter distribution
Low thermal resistance
Soft and very fast recovery antiparallel diode
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