Infineon IKY150N65EH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 160 A 650 V, 4-Pin

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N° de stock RS:
285-022
Référence fabricant:
IKY150N65EH7XKSA1
Fabricant:
Infineon
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Marque

Infineon

Maximum Continuous Collector Current

160 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

621 W

Number of Transistors

1

Configuration

Single Collector, Single Emitter, Single Gate

Package Type

PG-TO247-4-PLUS-NN5.1

Mounting Type

Through Hole

Channel Type

N

Pin Count

4

The Infineon IGBT introduces cutting edge trench technology, optimised for low saturation voltage and reduced switching losses. It is ideal for demanding applications, providing robust performance in industrial settings. With its advanced construction, the device efficiently manages large current loads while maintaining excellent thermal stability. This component is particularly suited for electric vehicle charging systems and industrial UPS solutions, ensuring reliability and security in critical applications.

Supports a maximum collector emitter voltage of 650 V
Handles up to 150 A continuous current
Features a soft and fast recovery antiparallel diode
Qualified for industrial applications per JEDEC standards
Easy integration with well defined PSpice models
Smooth switching behaviour enhances system efficiency

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