Infineon IKW40N65ES5XKSA1 IGBT, 79 A 650 V, 3-Pin PG-TO-247
- N° de stock RS:
- 260-5101
- Référence fabricant:
- IKW40N65ES5XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
9,72 €
(TVA exclue)
11,76 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 8 | 4,86 € | 9,72 € |
| 10 - 18 | 4,375 € | 8,75 € |
| 20 - 48 | 4,08 € | 8,16 € |
| 50 - 98 | 3,79 € | 7,58 € |
| 100 + | 3,54 € | 7,08 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 260-5101
- Référence fabricant:
- IKW40N65ES5XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current Ic | 79A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 230W | |
| Package Type | PG-TO-247 | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.35V | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.21mm | |
| Length | 42mm | |
| Standards/Approvals | JEDEC | |
| Width | 16.13mm | |
| Series | IKW | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current Ic 79A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 230W | ||
Package Type PG-TO-247 | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.35V | ||
Maximum Gate Emitter Voltage VGEO ±20 ±30 V | ||
Maximum Operating Temperature 175°C | ||
Height 5.21mm | ||
Length 42mm | ||
Standards/Approvals JEDEC | ||
Width 16.13mm | ||
Series IKW | ||
Automotive Standard No | ||
Infineon IKW Series IGBT, 79A Maximum Continuous Collector Current, 230W Maximum Power Dissipation - IKW40N65ES5XKSA1
This IGBT is a three‑pin power transistor designed for high‑power switching in industrial contexts. It operates across a wide temperature range and conforms to established semiconductor testing standards, providing a straightforward solution for applications that require substantial current handling and appreciable thermal dissipation capability.
Features and Benefits:
• 79A collector current enabling sustained high‑load operation
• 230W power dissipation supporting significant thermal throughput
• 650V gate‑emitter voltage tolerance allowing high‑voltage switching
• 1.35V VCE(sat) reducing conduction losses during Active modes
• -40 to 175°C rated temperature range permitting use in harsh environments
• 230W power dissipation supporting significant thermal throughput
• 650V gate‑emitter voltage tolerance allowing high‑voltage switching
• 1.35V VCE(sat) reducing conduction losses during Active modes
• -40 to 175°C rated temperature range permitting use in harsh environments
Applications
• Suitable for motor drive assemblies requiring high current
• Used with inverter stages in industrial power converters
• Ideal for switching elements in renewable‑energy inverters
• Can be used for high‑power UPS and industrial power-supply systems
• Used with inverter stages in industrial power converters
• Ideal for switching elements in renewable‑energy inverters
• Can be used for high‑power UPS and industrial power-supply systems
What package does it use for mounting compatibility?
It is supplied in a PG‑TO‑247 package that suits standard TO‑247 heatsinking and mounting arrangements.
How many electrical connections are present for circuit integration?
The device provides three pins for gate, collector and emitter connections in a typical transistor configuration.
Which approval indicates standardised test recognition?
It holds JEDEC approval confirming adherence to common semiconductor test criteria.
What is the maximum collector‑emitter saturation voltage under load?
The maximum VCE(sat) specified is 1.35V, which indicates the expected conduction drop during on‑state operation.
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