Infineon IKW50N65WR5XKSA1 IGBT, 80 A 650 V, 3-Pin PG-TO-247
- N° de stock RS:
- 244-2918
- Référence fabricant:
- IKW50N65WR5XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 240 unités)*
408,96 €
(TVA exclue)
494,88 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 16 juillet 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 240 - 240 | 1,704 € | 408,96 € |
| 480 + | 1,619 € | 388,56 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 244-2918
- Référence fabricant:
- IKW50N65WR5XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 282W | |
| Package Type | PG-TO-247 | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.40V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 16.13mm | |
| Standards/Approvals | RoHS | |
| Length | 41.42mm | |
| Series | IKW | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 282W | ||
Package Type PG-TO-247 | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.40V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Width 16.13mm | ||
Standards/Approvals RoHS | ||
Length 41.42mm | ||
Series IKW | ||
Automotive Standard No | ||
Infineon IKW Series IGBT, 650V Gate-Emitter Voltage, 80A Collector Current - IKW50N65WR5XKSA1
This IGBT is a power semiconductor device designed for high-voltage switching and control in demanding electronic systems. It combines significant current-handling capability with a high gate-emitter voltage rating to support robust switching duties across a wide thermal range in industrial environments.
Features and Benefits:
• 650V gate-emitter rating enables high-voltage switching capability
• 80A continuous collector current supports substantial load currents
• 282W power dissipation allows for sustained power handling
• 1.4V maximum VceSAT improves conduction efficiency under load
• RoHS conformity minimises hazardous substances in assemblies
• 80A continuous collector current supports substantial load currents
• 282W power dissipation allows for sustained power handling
• 1.4V maximum VceSAT improves conduction efficiency under load
• RoHS conformity minimises hazardous substances in assemblies
Applications
• Suitable for motor drive inverter stages
• Ideal for industrial power converters
• Used with switch-mode power supplies in heavy-duty systems
• Can be used for traction and large DC-DC conversion
• Ideal for industrial power converters
• Used with switch-mode power supplies in heavy-duty systems
• Can be used for traction and large DC-DC conversion
What package style does it use for mounting and thermal transfer?
It is supplied in a PG-TO-247 package to facilitate through-hole mounting and heatsinking.
What ambient temperature range can it operate within?
It is specified to function between -40°C and 175°C for broad thermal tolerance.
How many electrical connections are provided for circuit integration?
The device presents three pins for gate, collector and emitter interconnection.
Is it intended as an automotive-grade component?
The specification indicates it is not classified as an automotive-standard device.
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