Infineon IKY120N65EH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 160 A 650 V, 4-Pin

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N° de stock RS:
285-019
Référence fabricant:
IKY120N65EH7XKSA1
Fabricant:
Infineon
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Marque

Infineon

Maximum Continuous Collector Current

160 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

498 W

Configuration

Single Collector, Single Emitter, Single Gate

Package Type

PG-TO247-4-PLUS-NN5.1

Mounting Type

Through Hole

Channel Type

N

Pin Count

4

The Infineon IGBT exemplifies cutting edge technology with its 650 V trench stop IGBT7 features, designed for high efficiency and minimal switching losses. This device is engineered for robust performance in a variety of applications, including industrial UPS systems and electric vehicle charging. Its unique construction ensures low collector emitter saturation voltage, facilitating smooth switching behaviour while maintaining reliability under demanding conditions.

High speed operation enhances system responsiveness
Low switching losses improve energy efficiency
Humidity robustness ensures reliable performance
Optimized for hard switching applications for versatility
Comprehensive product spectrum fits diverse needs
Soft recovery diode minimizes electrical stress

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