Infineon IKY120N65EH7XKSA1, Type N-Channel IGBT, 160 A 650 V, 4-Pin PG-TO-247-4-PLUS-NN5.1, Through Hole

Voir l’ensemble des IGBTs
Actuellement indisponible
Désolés, nous ne savons pas quand ce produit sera réapprovisionné.
Options de conditionnement :
N° de stock RS:
285-019
Référence fabricant:
IKY120N65EH7XKSA1
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Maximum Continuous Collector Current Ic

160A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

498W

Package Type

PG-TO-247-4-PLUS-NN5.1

Mount Type

Through Hole

Channel Type

Type N

Pin Count

4

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

40°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

5.1mm

Length

20.1mm

Width

15.9 mm

Automotive Standard

No

The Infineon IGBT exemplifies cutting edge technology with its 650 V trench stop IGBT7 features, designed for high efficiency and minimal switching losses. This device is engineered for robust performance in a variety of applications, including industrial UPS systems and electric vehicle charging. Its unique construction ensures low collector emitter saturation voltage, facilitating smooth switching behaviour while maintaining reliability under demanding conditions.

High speed operation enhances system responsiveness

Low switching losses improve energy efficiency

Humidity robustness ensures reliable performance

Optimized for hard switching applications for versatility

Comprehensive product spectrum fits diverse needs

Soft recovery diode minimizes electrical stress

Liens connexes