Infineon HEXFET Type P-Channel MOSFET, 23 A, 100 V Enhancement, 3-Pin TO-247
- N° de stock RS:
- 919-5028
- Référence fabricant:
- IRFP9140NPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (25 unités, dans un tube de 25)*
45,23 €
(TVA exclue)
54,73 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En voie de retrait du marché
- Plus 250 unité(s) expédiée(s) à partir du 05 octobre 2026
- Plus 825 unité(s) expédiée(s) à partir du 12 octobre 2026
- 150 unité(s) finale(s) expédiée(s) à partir du 12 octobre 2026
Unité | Prix par unité | le tube* |
|---|---|---|
| 25 - 25 | 1,809 € | 45,23 € |
| 50 - 100 | 1,719 € | 42,98 € |
| 125 - 225 | 1,646 € | 41,15 € |
| 250 - 600 | 1,574 € | 39,35 € |
| 625 + | 1,466 € | 36,65 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 919-5028
- Référence fabricant:
- IRFP9140NPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 117mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 140W | |
| Forward Voltage Vf | -1.3V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 97nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 5.3mm | |
| Height | 20.3mm | |
| Length | 15.9mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 117mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 140W | ||
Forward Voltage Vf -1.3V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 97nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 5.3mm | ||
Height 20.3mm | ||
Length 15.9mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MX
Infineon HEXFET Series MOSFET, 23A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRFP9140NPBF
This high-power MOSFET is designed for efficient switching performance in various applications. It is ideal for power electronics, combining a high continuous drain current capability with low resistance, facilitating dependable and precise control in automation and electrical systems across multiple operational environments.
Features & Benefits
• P-Channel configuration allows for flexible circuit designs
• Maximum continuous drain current of 23A
• 100V drain-source voltage rating enhances safety
• Low RDS(on) of 117mΩ reduces power loss
• Suitable for enhancement mode applications ensuring stable performance
Applications
• Utilised in motor control for improved efficiency
• Ideal for energy management systems that require high reliability
• Common in power supply circuits for robust operation
• Employed in switching regulators for effective power conversion
• Suitable for industrial automation systems requiring dependable switching
What is the maximum gate threshold voltage for the device?
It has a maximum gate threshold voltage of 4V, suitable for diverse circuit designs.
How does the RDS(on) value impact performance?
The low RDS(on) value of 117mΩ minimises energy losses, enhancing efficiency and thermal management in applications.
What types of circuits can benefit from this MOSFET?
It is appropriate for both linear and switching circuits, making it versatile for varied electronic applications.
What is the typical gate charge required for operation?
The MOSFET requires a typical gate charge of 97nC at a gate-source voltage of 10V for optimal performance.
What are the implications of the maximum operating temperature?
With a maximum operating temperature of +175°C, this device is suitable for high-temperature environments, improving its reliability in challenging conditions.
Liens connexes
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-247 IRFP9140NPBF
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- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
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