Infineon HEXFET Type P-Channel MOSFET, 23 A, 100 V Enhancement, 3-Pin TO-247

N° de stock RS:: 919-5028
Référence fabricant:: IRFP9140NPBF
Fabricant:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 23 A, 100 V Enhancement, 3-Pin TO-247

Offre groupée disponible

Sous-total (1 tube de 25 unités)*

39,80 €

(TVA exclue)

48,15 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

En stock

400 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Plus 25 unité(s) expédiée(s) à partir du 07 janvier 2026

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Unité	Prix par unité	le tube*
25 - 25	1,592 €	39,80 €
50 - 100	1,512 €	37,80 €
125 - 225	1,448 €	36,20 €
250 - 600	1,385 €	34,63 €
625 +	1,289 €	32,23 €

*Prix donné à titre indicatif

N° de stock RS:: 919-5028
Référence fabricant:: IRFP9140NPBF
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	23A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-247
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	117mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	97nC
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	-1.3V
	Maximum Power Dissipation Pd	140W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	20.3mm
	Length	15.9mm
	Standards/Approvals	No
	Width	5.3 mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 23A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-247
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 117mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 97nC
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf -1.3V
	Maximum Power Dissipation Pd 140W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 20.3mm
	Length 15.9mm
	Standards/Approvals No
	Width 5.3 mm
	Automotive Standard No

Pays d'origine :: MX

Infineon HEXFET Series MOSFET, 23A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRFP9140NPBF

This high-power MOSFET is designed for efficient switching performance in various applications. It is ideal for power electronics, combining a high continuous drain current capability with low resistance, facilitating dependable and precise control in automation and electrical systems across multiple operational environments.

Features & Benefits

• P-Channel configuration allows for flexible circuit designs

• Maximum continuous drain current of 23A

• 100V drain-source voltage rating enhances safety

• Low RDS(on) of 117mΩ reduces power loss

• Suitable for enhancement mode applications ensuring stable performance

Applications

• Utilised in motor control for improved efficiency

• Ideal for energy management systems that require high reliability

• Common in power supply circuits for robust operation

• Employed in switching regulators for effective power conversion

• Suitable for industrial automation systems requiring dependable switching

What is the maximum gate threshold voltage for the device?

It has a maximum gate threshold voltage of 4V, suitable for diverse circuit designs.

How does the RDS(on) value impact performance?

The low RDS(on) value of 117mΩ minimises energy losses, enhancing efficiency and thermal management in applications.

What types of circuits can benefit from this MOSFET?

It is appropriate for both linear and switching circuits, making it versatile for varied electronic applications.

What is the typical gate charge required for operation?

The MOSFET requires a typical gate charge of 97nC at a gate-source voltage of 10V for optimal performance.

What are the implications of the maximum operating temperature?

With a maximum operating temperature of +175°C, this device is suitable for high-temperature environments, improving its reliability in challenging conditions.