Infineon HEXFET N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-247
- N° de stock RS:
- 919-4902
- Référence fabricant:
- IRFP140NPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 25 unités)*
39,225 €
(TVA exclue)
47,45 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 275 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 25 - 25 | 1,569 € | 39,23 € |
| 50 - 100 | 1,287 € | 32,18 € |
| 125 - 225 | 1,208 € | 30,20 € |
| 250 - 600 | 1,13 € | 28,25 € |
| 625 + | 1,036 € | 25,90 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 919-4902
- Référence fabricant:
- IRFP140NPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 94nC | |
| Maximum Power Dissipation Pd | 140W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.9mm | |
| Width | 5.3mm | |
| Height | 20.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 94nC | ||
Maximum Power Dissipation Pd 140W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Length 15.9mm | ||
Width 5.3mm | ||
Height 20.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- MX
Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRFP140NPBF
This MOSFET plays a crucial role in improving efficiency and performance across various electronic applications. It is designed to accommodate high currents and voltages, offering dependable power management solutions in automation systems, electronics, and mechanical industries. Its ability to function under extreme conditions ensures versatility in numerous applications.
Features & Benefits
• Maximum continuous drain current of 33A for enhanced load capabilities
• Drain-source voltage rating of up to 100V for effective performance
• Low maximum drain-source resistance of 52 mΩ for efficient operation
• Designed for power dissipation of 140W to manage thermal conditions
• Typical gate charge of 94 nC at 10V for rapid switching speeds
Applications
• Reliable use in switching power supplies
• Motor control for accurate operation
• High current in power conversion systems
• Integration into power amplifiers for improved signal amplification
What is the maximum voltage this component can handle?
It withstands a maximum drain-source voltage of 100V, suitable for high-voltage applications.
How does the gate charge affect the operation?
A typical gate charge of 94 nC at 10V facilitates faster switching, enhancing circuit efficiency.
What are the thermal characteristics of this component?
It operates effectively between -55°C and +175°C, ensuring reliability in different environments.
Can this component be used in automation projects?
Yes, its high continuous current capacity and voltage ratings are ideal for various automation applications.
How does the low RDS(on) enhance its performance?
The low maximum drain-source resistance helps to reduce conduction losses, leading to more energy-efficient operation.
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-247 IRFP140NPBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-247