Infineon HEXFET Type N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-247

N° de stock RS:: 919-4902
Référence fabricant:: IRFP140NPBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-247

Offre groupée disponible

Sous-total (1 tube de 25 unités)*

41,90 €

(TVA exclue)

50,70 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

En stock

725 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	le tube*
25 - 25	1,676 €	41,90 €
50 - 100	1,375 €	34,38 €
125 - 225	1,291 €	32,28 €
250 - 600	1,207 €	30,18 €
625 +	1,106 €	27,65 €

*Prix donné à titre indicatif

N° de stock RS:: 919-4902
Référence fabricant:: IRFP140NPBF
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	33A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-247
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	52mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	94nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	140W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Height	20.3mm
	Standards/Approvals	No
	Width	5.3 mm
	Length	15.9mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 33A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-247
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 52mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 94nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 140W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Height 20.3mm
	Standards/Approvals No
	Width 5.3 mm
	Length 15.9mm
	Automotive Standard No

Pays d'origine :: MX

Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRFP140NPBF

This MOSFET plays a crucial role in improving efficiency and performance across various electronic applications. It is designed to accommodate high currents and voltages, offering dependable power management solutions in automation systems, electronics, and mechanical industries. Its ability to function under extreme conditions ensures versatility in numerous applications.

Features & Benefits

• Maximum continuous drain current of 33A for enhanced load capabilities

• Drain-source voltage rating of up to 100V for effective performance

• Low maximum drain-source resistance of 52 mΩ for efficient operation

• Designed for power dissipation of 140W to manage thermal conditions

• Typical gate charge of 94 nC at 10V for rapid switching speeds

Applications

• Reliable use in switching power supplies

• Motor control for accurate operation

• High current in power conversion systems

• Integration into power amplifiers for improved signal amplification

What is the maximum voltage this component can handle?

It withstands a maximum drain-source voltage of 100V, suitable for high-voltage applications.

How does the gate charge affect the operation?

A typical gate charge of 94 nC at 10V facilitates faster switching, enhancing circuit efficiency.

What are the thermal characteristics of this component?

It operates effectively between -55°C and +175°C, ensuring reliability in different environments.

Can this component be used in automation projects?

Yes, its high continuous current capacity and voltage ratings are ideal for various automation applications.

How does the low RDS(on) enhance its performance?

The low maximum drain-source resistance helps to reduce conduction losses, leading to more energy-efficient operation.