Infineon HEXFET N-Channel MOSFET, 81 A, 55 V Enhancement, 3-Pin TO-247
- N° de stock RS:
- 919-4892
- Référence fabricant:
- IRFP054NPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 25 unités)*
30,05 €
(TVA exclue)
36,35 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le tube* |
|---|---|---|
| 25 - 25 | 1,202 € | 30,05 € |
| 50 - 100 | 1,169 € | 29,23 € |
| 125 - 225 | 1,138 € | 28,45 € |
| 250 - 600 | 1,11 € | 27,75 € |
| 625 + | 1,082 € | 27,05 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 919-4892
- Référence fabricant:
- IRFP054NPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 81A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 130nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 170W | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.3mm | |
| Width | 5.3mm | |
| Length | 15.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 81A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 130nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 170W | ||
Maximum Operating Temperature 175°C | ||
Height 20.3mm | ||
Width 5.3mm | ||
Length 15.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- MX
Infineon HEXFET Series MOSFET, 81A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRFP054NPBF
This MOSFET provides a robust solution for high-speed performance and efficient power management. With its N-channel configuration, the device ensures dependable operation across various electronic circuits. It accommodates continuous drain currents up to 81A and has a voltage rating of 55V, making it a notable choice for professionals in the automation, electronics, and mechanical sectors.
Features & Benefits
• Maximum continuous drain current of 81A supports high-performance applications
• Low on-resistance of 12mΩ contributes to improved efficiency
• Wide gate threshold voltage range allows for versatile circuit designs
• High power dissipation capability of 170W ensures long-lasting operation
• Compact TO-247AC package simplifies installation
Applications
• Used in power conversion and motor control systems
• Integral to power supply and amplifier circuits
• Applicable in renewable energy systems for efficient switching
• Suitable for automotive , enhancing performance resilience
What is the maximum power dissipation capability of this device?
The maximum power dissipation is rated at 170W, allowing it to manage substantial loads effectively.
How does the gate threshold voltage affect operation?
The gate threshold voltage ranges from 2V to 4V, which enables compatibility with various circuit designs and ensures efficient operation within specified parameters.
Can this MOSFET be used in high-temperature environments?
Yes, it operates within a temperature range of -55°C to +175°C, making it suitable for challenging thermal conditions.
What are the benefits of using a low RDS(on)?
A low RDS(on) of 12mΩ reduces heat generation and enhances efficiency, critical for high-performance applications.
Is it easy to install in existing electronic systems?
The TO-247AC package type is designed for through-hole mounting, making it straightforward to install in various applications.
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