Infineon HEXFET Type N-Channel MOSFET, 160 A, 55 V Enhancement, 3-Pin TO-247
- N° de stock RS:
- 907-4996
- Numéro d'article Distrelec:
- 304-44-460
- Référence fabricant:
- IRFP1405PBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
13,74 €
(TVA exclue)
16,625 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 145 unité(s) expédiée(s) à partir du 11 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 2,748 € | 13,74 € |
| 25 - 45 | 2,504 € | 12,52 € |
| 50 - 120 | 2,336 € | 11,68 € |
| 125 - 245 | 2,172 € | 10,86 € |
| 250 + | 2,006 € | 10,03 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 907-4996
- Numéro d'article Distrelec:
- 304-44-460
- Référence fabricant:
- IRFP1405PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 160A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 120nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 310W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 5.31mm | |
| Length | 15.29mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 160A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 120nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 310W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 5.31mm | ||
Length 15.29mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-247 IRFP1405PBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-247 IRFP054NPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-247 IRFP064NPBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-247 IRFP3306PBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247