Vishay Si2309CDS Type P-Channel MOSFET, 1.2 A, -60 V Enhancement, 3-Pin SOT-23 SI2309CDS-T1-GE3

N° de stock RS:: 919-0262
Référence fabricant:: SI2309CDS-T1-GE3
Fabricant:: Vishay

Vishay Si2309CDS Type P-Channel MOSFET, 1.2 A, -60 V Enhancement, 3-Pin SOT-23 SI2309CDS-T1-GE3

Sous-total (1 bobine de 3000 unités)*

606,00 €

(TVA exclue)

732,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

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Plus 12 000 unité(s) expédiée(s) à partir du 07 août 2026

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Unité	Prix par unité	la bobine*
3000 +	0,202 €	606,00 €

*Prix donné à titre indicatif

N° de stock RS:: 919-0262
Référence fabricant:: SI2309CDS-T1-GE3
Fabricant:: Vishay

Spécifications

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.2A
	Maximum Drain Source Voltage Vds	-60V
	Series	Si2309CDS
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	345mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	2.7nC
	Forward Voltage Vf	-1.2V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	1.7W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	3.04mm
	Width	1.4mm
	Standards/Approvals	RoHS
	Height	1.02mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.2A
	Maximum Drain Source Voltage Vds -60V
	Series Si2309CDS
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 345mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 2.7nC
	Forward Voltage Vf -1.2V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 1.7W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 3.04mm
	Width 1.4mm
	Standards/Approvals RoHS
	Height 1.02mm
	Automotive Standard No

Pays d'origine :: CN

Vishay Si2309CDS Series MOSFET, -60V Drain Source Voltage, 1.2A Continuous Drain Current - SI2309CDS-T1-GE3

This p-channel MOSFET is a compact surface-mount transistor designed for switching and load-control tasks in small-footprint electronics. It operates as an enhancement-mode device suitable for low- to moderate-current applications where a P-channel topology is required. The package and materials support routine board-level assembly and use across a wide ambient temperature span.

Features and Benefits:

• Low on-resistance 345mΩ reduces conduction losses
• 60V drain rating enables higher-voltage switching
• Continuous drain current 1.2A supports modest load currents
• Gate charge 2.7nC allows faster switching transitions
• Power dissipation 1.7W manages thermal load under normal use

Applications

• Suitable for handheld device high-side switching
• Ideal for battery protection and reverse-current blocking
• Used with power-management circuits in consumer electronics
• Can be used for signal-level load switching in control boards

What temperature range can it tolerate during operation?

It is specified to function between -55°C and 150°C, covering common industrial and consumer thermal environments.

How many pins and what mounting style does it use?

It has three terminals and is supplied in a surface-mount SOT-23 package for automated assembly.

What gate voltage limits should be observed in a design?

The gate-source voltage must not exceed ±20V to avoid damage to the gate oxide.

Are there any restrictions on automotive use?

It is not classified as an automotive-grade device, so designs requiring automotive approval should consider alternative qualified components.