Vishay Si2309CDS Type P-Channel MOSFET, 1.2 A, -60 V Enhancement, 3-Pin SOT-23

N° de stock RS:: 919-0262
Référence fabricant:: SI2309CDS-T1-GE3
Fabricant:: Vishay

Vishay Si2309CDS Type P-Channel MOSFET, 1.2 A, -60 V Enhancement, 3-Pin SOT-23

Sous-total (1 bobine de 3000 unités)*

606,00 €

(TVA exclue)

732,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

12 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	la bobine*
3000 +	0,202 €	606,00 €

*Prix donné à titre indicatif

N° de stock RS:: 919-0262
Référence fabricant:: SI2309CDS-T1-GE3
Fabricant:: Vishay

Spécifications

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.2A
	Maximum Drain Source Voltage Vds	-60V
	Package Type	SOT-23
	Series	Si2309CDS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	345mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.7W
	Typical Gate Charge Qg @ Vgs	2.7nC
	Forward Voltage Vf	-1.2V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Width	1.4mm
	Length	3.04mm
	Height	1.02mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.2A
	Maximum Drain Source Voltage Vds -60V
	Package Type SOT-23
	Series Si2309CDS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 345mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.7W
	Typical Gate Charge Qg @ Vgs 2.7nC
	Forward Voltage Vf -1.2V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Width 1.4mm
	Length 3.04mm
	Height 1.02mm
	Automotive Standard No

Pays d'origine :: CN

Vishay Si2309CDS Series MOSFET, -60V Drain Source Voltage, 1.2A Continuous Drain Current - SI2309CDS-T1-GE3

This p‑channel MOSFET is a surface‑mount transistor designed for switching and control tasks in Compact electronic assemblies. It operates as an enhancement‑mode device suitable for low‑ to medium‑current circuits, offering a balance of voltage handling and thermal endurance for industrial applications.

Features and Benefits:

• -60V maximum Vds for high‑voltage switching capability • 1.2A continuous drain current for moderate load handling • 345mΩ Rds(on) for predictable conduction losses • 2.7nC typical gate charge for efficient gate drive • 1.7W power dissipation supporting thermal‑budget planning • -55°C to 150°C operating range for wide‑temperature environments

Applications

• Suitable for load switching in automation control modules • Ideal for power‑rail reverse‑polarity protection circuits • Used with battery management and power distribution boards • Can be used for level‑shifting and small‑signal power stages

What package type is used for Compact board layouts?

It is supplied in a SOT‑23 package configured for three‑pin surface mounting, facilitating dense PCB assembly.

How does the device handle gate drive requirements?

The gate may be driven within a ±20V range relative to source, allowing compatibility with common control voltages while limiting gate stress.

What thermal considerations should I allow for in design?

With maximum power dissipation of 1.7W, board copper and thermal vias should be sized to manage junction temperature under load within the -55°C to 150°C specified range.

Are there environmental or material restrictions to note?

The component conforms to RoHS requirements, indicating restricted hazardous substances are controlled in its manufacture.