SiC N-Channel MOSFET, 10 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0280120D

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Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
915-8820
Référence fabricant:
C2M0280120D
Fabricant:
Wolfspeed
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Marque

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

370 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

62.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+25 V

Number of Elements per Chip

1

Transistor Material

SiC

Width

21.1mm

Typical Gate Charge @ Vgs

20.4 nC @ 20 V

Maximum Operating Temperature

+150 °C

Length

16.13mm

Height

5.21mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

3.3V

Pays d'origine :
CN

Wolfspeed Silicon Carbide Power MOSFETs


Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation


MOSFET Transistors, Wolfspeed

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