Infineon HEXFET Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-263 IRLZ34NSTRLPBF

N° de stock RS:: 915-5112
Référence fabricant:: IRLZ34NSTRLPBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-263 IRLZ34NSTRLPBF

Offre groupée disponible

Sous-total (1 paquet de 20 unités)*

14,34 €

(TVA exclue)

17,36 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

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Plus 1 600 unité(s) expédiée(s) à partir du 05 janvier 2026

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Unité	Prix par unité	le paquet*
20 - 80	0,717 €	14,34 €
100 - 180	0,681 €	13,62 €
200 - 480	0,653 €	13,06 €
500 - 980	0,624 €	12,48 €
1000 +	0,581 €	11,62 €

*Prix donné à titre indicatif

N° de stock RS:: 915-5112
Référence fabricant:: IRLZ34NSTRLPBF
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	68W
	Maximum Gate Source Voltage Vgs	16 V
	Typical Gate Charge Qg @ Vgs	25nC
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Height	4.83mm
	Standards/Approvals	No
	Length	10.67mm
	Width	11.3 mm
	Distrelec Product Id	304-44-481
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 68W
	Maximum Gate Source Voltage Vgs 16 V
	Typical Gate Charge Qg @ Vgs 25nC
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Height 4.83mm
	Standards/Approvals No
	Length 10.67mm
	Width 11.3 mm
	Distrelec Product Id 304-44-481
	Automotive Standard No

Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRLZ34NSTRLPBF

This high-performance N-channel MOSFET facilitates efficient switching and amplification in various electrical applications. With a continuous drain current capacity of 30A and a maximum drain-source voltage of 55V, it suits automotive, industrial, and consumer electronics applications. Its surface mount design simplifies integration into modern circuit boards, making it a key component for effective power management.

Features & Benefits

• Low gate threshold voltage for enhanced switching speed

• Low RDS(on) for efficient power dissipation

• High thermal resistance allows operation at elevated temperatures

• Maximum power dissipation of 68 W contributes to durability

• Surface mount technology supports Compact designs

• Efficient drive with capable high gate charge at 5V

Applications

• Power supply circuits for effective voltage regulation

• Motor control requiring swift switching

• DC-DC converters for improved efficiency

• Precision instrumentation for dependable performance

• Automotive with high reliability demands

What is the maximum continuous current this component can handle?

The device can handle a maximum continuous drain current of 30A.

How does this MOSFET manage thermal performance?

It operates at a maximum temperature of +175 °C, ensuring reliability in high-temperature environments.

Can it be used in automotive applications?

Yes, its robust construction and high-temperature tolerance make it suitable for various automotive circuits.

What type of circuit configurations can it support?

The MOSFET supports enhancement mode transistor configurations, Ideal for switching applications.

Is it compatible with surface mount circuit designs?

Yes, the D2PAK (TO-263) package type allows easy integration into surface mount applications and facilitates simple placement on circuit boards.