Infineon HEXFET N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-263 IRLZ34NSTRLPBF
- N° de stock RS:
- 145-8936
- Référence fabricant:
- IRLZ34NSTRLPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 800 unités)*
548,00 €
(TVA exclue)
663,20 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 04 janvier 2027
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 800 - 800 | 0,685 € | 548,00 € |
| 1600 - 1600 | 0,65 € | 520,00 € |
| 2400 + | 0,609 € | 487,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 145-8936
- Référence fabricant:
- IRLZ34NSTRLPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 68W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 11.3mm | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Gate Source Voltage Vgs 16V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 68W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 11.3mm | ||
Height 4.83mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRLZ34NSTRLPBF
This high-performance N-channel MOSFET facilitates efficient switching and amplification in various electrical applications. With a continuous drain current capacity of 30A and a maximum drain-source voltage of 55V, it suits automotive, industrial, and consumer electronics applications. Its surface mount design simplifies integration into modern circuit boards, making it a key component for effective power management.
Features & Benefits
• Low gate threshold voltage for enhanced switching speed
• Low RDS(on) for efficient power dissipation
• High thermal resistance allows operation at elevated temperatures
• Maximum power dissipation of 68 W contributes to durability
• Surface mount technology supports Compact designs
• Efficient drive with capable high gate charge at 5V
Applications
• Power supply circuits for effective voltage regulation
• Motor control requiring swift switching
• DC-DC converters for improved efficiency
• Precision instrumentation for dependable performance
• Automotive with high reliability demands
What is the maximum continuous current this component can handle?
The device can handle a maximum continuous drain current of 30A.
How does this MOSFET manage thermal performance?
It operates at a maximum temperature of +175 °C, ensuring reliability in high-temperature environments.
Can it be used in automotive applications?
Yes, its robust construction and high-temperature tolerance make it suitable for various automotive circuits.
What type of circuit configurations can it support?
The MOSFET supports enhancement mode transistor configurations, Ideal for switching applications.
Is it compatible with surface mount circuit designs?
Yes, the D2PAK (TO-263) package type allows easy integration into surface mount applications and facilitates simple placement on circuit boards.
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IRLZ34NSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263