Infineon HEXFET Type N-Channel MOSFET, 94 A, 55 V Enhancement, 3-Pin TO-263

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800 - 8000,889 €711,20 €
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N° de stock RS:
165-8196
Référence fabricant:
IRF1010ZSTRLPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

94A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

7.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

63nC

Forward Voltage Vf

-1.3V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

140W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Width

11.3 mm

Height

4.83mm

Length

10.67mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Pays d'origine :
CN

Infineon HEXFET Series MOSFET, 94A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRF1010ZSTRLPBF


This surface mount MOSFET provides exceptional performance in various applications. Created by Infineon, it leverages Advanced processing techniques to deliver low on-resistance and high current handling capabilities. Its effectiveness in high-temperature environments makes it an important component for professionals in automation, electronics, electrical, and mechanical sectors.

Features & Benefits


• High continuous drain current of 94A supports substantial load applications

• Low RDS(on) of 7.5mΩ minimises power losses and enhances efficiency

• Maximum drain-source voltage of 55V enables design flexibility

• High reliability with a maximum operating temperature of 175°C

• Fast switching capabilities reduce delays in circuit response

• N-channel configuration is suitable for Advanced electronic designs

Applications


• Utilised in power management and conversion systems

• Employed in motor control circuits for automation technologies

• Suitable for power supply designs demanding high efficiency

• Integral in electric vehicle power electronics

• Used in renewable energy systems for effective energy conversion

What are the implications of the low on-resistance feature?


The low on-resistance of 7.5mΩ ensures minimal heat generation during operation, leading to increased efficiency and reduced cooling requirements.

How does this MOSFET perform in high-temperature environments?


It supports maximum operating temperatures of up to 175°C, making it suitable for harsh conditions without compromising performance.

What type of mounting is required for this component?


This device is designed for surface mount applications, allowing Compact layout and efficient thermal management on printed circuit boards.

Can it handle pulsed currents effectively?


Yes, it features a pulsed drain current rating of 360A, enabling it to manage transient conditions efficiently.

What characteristics should I consider for circuit compatibility?


Ensure that the gate threshold voltage ranges from 2V to 4V to ensure proper switching behaviour within your circuit design.

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