Infineon HEXFET Type N-Channel MOSFET, 13.6 A, 30 V Enhancement, 8-Pin SOIC IRF7821TRPBF
- N° de stock RS:
- 915-4963
- Référence fabricant:
- IRF7821TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 20 unités)*
15,60 €
(TVA exclue)
18,80 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 4 000 unité(s) expédiée(s) à partir du 12 mars 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 80 | 0,78 € | 15,60 € |
| 100 - 380 | 0,595 € | 11,90 € |
| 400 - 980 | 0,566 € | 11,32 € |
| 1000 + | 0,411 € | 8,22 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 915-4963
- Référence fabricant:
- IRF7821TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 9.3nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 155°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Width | 4 mm | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 9.3nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 155°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Width 4 mm | ||
Height 1.5mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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