Infineon HEXFET N-Channel MOSFET, 20 A, 30 V Enhancement, 8-Pin SOIC IRF7832TRPBF

N° de stock RS:: 165-5715
Référence fabricant:: IRF7832TRPBF
Fabricant:: Infineon

Infineon HEXFET N-Channel MOSFET, 20 A, 30 V Enhancement, 8-Pin SOIC IRF7832TRPBF

Sous-total (1 bobine de 4000 unités)*

2 192,00 €

(TVA exclue)

2 652,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 17 mai 2027

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Unité	Prix par unité	la bobine*
4000 +	0,548 €	2 192,00 €

*Prix donné à titre indicatif

N° de stock RS:: 165-5715
Référence fabricant:: IRF7832TRPBF
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	4.8mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2.5W
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Typical Gate Charge Qg @ Vgs	34nC
	Maximum Operating Temperature	155°C
	Width	4mm
	Length	5mm
	Standards/Approvals	No
	Height	1.5mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 4.8mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2.5W
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs -20V, +20V
	Typical Gate Charge Qg @ Vgs 34nC
	Maximum Operating Temperature 155°C
	Width 4mm
	Length 5mm
	Standards/Approvals No
	Height 1.5mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 20A Maximum Continuous Drain Current - IRF7832TRPBF

This MOSFET is a surface-mount N-channel enhancement device designed for power switching and control in compact electronic systems. It operates across a wide temperature range suitable for industrial environments and integrates into standard SOIC footprints for PCB assembly, offering a balance of current capability and manageable power dissipation for medium-power designs.

Features and Benefits:

• Very low on-resistance 4.8 mΩ enabling reduced conduction losses
• 20A continuous drain current supporting high-current loads
• 30V drain-source rating for common low-voltage power rails
• 34 nC typical gate charge for faster switching transitions
• 2.5W maximum power dissipation for sustained thermal handling
• ±20V gate-source tolerance allowing flexible drive levels

Applications

• Suitable for DC-DC converter switching stages
• Ideal for motor driver power switches in compact designs
• Used with synchronous rectification in power supplies
• Can be used for load switching in telecoms equipment
• Appropriate for battery management and power distribution

What thermal extremes can it withstand in service?

The device is specified to function between -55 °C and 155 °C, enabling use in harsh industrial temperature conditions.

How many pins does the package present for PCB layout?

It comes in an 8-pin SOIC package which aids in standard footprint placement and thermal spreading.

What gate drive considerations arise from its gate charge?

With a typical gate charge of 34 nC, drivers must supply sufficient peak current to achieve the desired switching speed without excessive drive losses.

How does its forward voltage affect series conduction scenarios?

The measured forward voltage of 1V affects the drop across intrinsic diode events and should be considered when designing for reverse recovery or body-diode conduction.