Infineon HEXFET Type N-Channel MOSFET, 130 A, 100 V Enhancement, 3-Pin TO-220

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Sous-total (1 tube de 50 unités)*

106,30 €

(TVA exclue)

128,60 €

(TVA incluse)

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Unité
Prix par unité
le tube*
50 - 502,126 €106,30 €
100 - 2001,743 €87,15 €
250 +1,637 €81,85 €

*Prix donné à titre indicatif

N° de stock RS:
913-3979
Référence fabricant:
IRFB4310PBF
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

130A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

7mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

170nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Width

4.82 mm

Height

9.02mm

Standards/Approvals

No

Length

10.66mm

Automotive Standard

No

Pays d'origine :
MX

Infineon HEXFET Series MOSFET, 130A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IRFB4310PBF


This robust and efficient power transistor is designed for high-performance applications in automation, electronics, and the electrical industry. The N-channel technology provides advantages in power management and switching capabilities. Its operating temperature range of -55°C to +175°C enhances its versatility and reliability across various environments.

Features & Benefits


• Supports up to 130A continuous drain current for substantial load demands

• Operates with a maximum voltage of 100 V for improved utility

• Low RDS(on) of 7 mΩ minimises power loss

• Features enhancement mode operation to enhance efficiency

• Integrated ruggedness with avalanche and dynamic dV/dt capabilities

• Fully characterised capacitance for precise performance optimisation

Applications


• Utilised in high-efficiency synchronous rectification systems

• Employed within uninterruptible power supplies for dependable energy backup

• Suitable for high-speed power switching circuits

• Designed for hard-switched and high-frequency

How does the low RDS(on) impact efficiency?


The low RDS(on) reduces heat generation during operation, leading to enhanced power delivery efficiency.

What is the significance of avalanche capability?


Avalanche capability protects the device from excessive voltage spikes, promoting stable performance under challenging conditions.

Can this device be used in high-frequency applications?


Yes, this MOSFET is designed for high-frequency circuits, making it suitable for various advanced applications.

What is the maximum current it can handle at elevated temperatures?


At a case temperature of 100°C, the maximum continuous drain current can reach 92 A, ensuring dependable performance.

How should it be mounted for optimal performance?


It is recommended to mount the device on a flat greased surface to maximise thermal transfer to the heatsink.

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